[1]王亚飞,等.大功率晶闸管芯片终端钝化技术[J].控制与信息技术(原大功率变流技术),2017,(06):34-37.[doi:10.13889/j.issn.2095-3631.2017.06.007]
 WANG Yafei,DAI Xiaoping,et al.Passivation Technology for High Power Thyristor Chip Terminal[J].High Power Converter Technology,2017,(06):34-37.[doi:10.13889/j.issn.2095-3631.2017.06.007]
点击复制

大功率晶闸管芯片终端钝化技术()
分享到:

《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年06期
页码:
34-37
栏目:
电力电子器件
出版日期:
2017-12-05

文章信息/Info

Title:
Passivation Technology for High Power Thyristor Chip Terminal
文章编号:
2095-3631(2017)06-0034-04
作者:
王亚飞 1 2戴小平1 2高 军2王东东2
(1. 新型功率半导体器件国家重点实验室,湖南株洲 412001;2. 株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
WANG Yafei 1 2 DAI Xiaoping 1 2 GAO Jun2 WANG Dongdong2
(1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001, China; 2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
晶闸管可靠性半绝缘层钝化界面电荷
Keywords:
thyristor reliability semi-insulator passivation surface charge
分类号:
TN34;TN305
DOI:
10.13889/j.issn.2095-3631.2017.06.007
文献标志码:
A
摘要:
为提高大功率晶闸管使用的可靠性,芯片终端采用新型半绝缘层钝化代替传统绝缘层钝化,以避免界面电荷的积累。文章借助计算机辅助设计(TCAD)模拟界面电荷对高压直流输电用晶闸管阻断能力的影响,并通过高温阻断试验、湿度试验等来进一步比较两种不同的芯片终端钝化方式。试验证明,半绝缘层钝化可大大提高器件的可靠性,且器件热疲劳寿命能满足HVDC 工程应用需求。
Abstract:
In order to improve the long-term reliability of high power thyristor, a novel semi-insulator passivation layer was proposed to replace the conventional insulator layer which can avoid the accumulation of surface charge. The effect of surface charge on blocking ability of a HVDC thyristor was simulated through TCAD (technology computer aided design). The comparison of these two designs through hot temperature blocking and humidity test showed an improved reliability of a semi-insulator passivated device. Additional power cycling test demonstrated that the fatigue-life expectation of the proposal design could meet the requirement of HVDC scheme.

参考文献/References:

[1]刘国友,黄建伟,舒丽辉,等. 6 英寸高压晶闸管的研制[J]. 电网技术, 2007,31(2):90-92.
[2]QIU Y F ,DAI C B ,JIN R. Impact of Power Electronic Device Development on Power Grids [C]//28th ISPSD. Prague:IEEE, 2016:9-14.
[3]卢其庆. 半导体器件可靠性与失效分析[M]. 南京:江苏科学技术出版社,1981.
[4]万积庆,唐元洪. 功率晶体管原理[M]. 长沙:湖南大学出版社, 2009.
[5]GOUD C B, BHAT K N. Analysis and Optimal Design of Semi- Insulator Passivated High-Voltage Field Plate Structures and Comparison with Dielectric Passivated Structures[J]. IEEE Transactions on Electron Devices,1994,41(10):1856-1865.
[6]REINHARD S. GTO Databook Section 4[M]. Lenzburg:ABB Semiconductors AG.
[7]赵霞,吴金,姚建楠. 基于失效机理的半导体器件寿命模型研究[J]. 电子元器件应用,2007,25(6):15-18.

相似文献/References:

[1]张 明.大功率半导体器件的可靠性评估[J].控制与信息技术(原大功率变流技术),2015,(01):1.[doi:10.13889/j.issn.2095-3631.2015.01.001]
 ZHANG Ming.Reliability Evaluation of High Power Semiconductors[J].High Power Converter Technology,2015,(06):1.[doi:10.13889/j.issn.2095-3631.2015.01.001]
[2]孙文伟,颜骥,任亚东,等.基于半导体开关的100 kV脉冲功率系统[J].控制与信息技术(原大功率变流技术),2014,(04):15.[doi:10.13889/j.issn.2095-3631.2014.04.004]
 SUN Wen-wei,YAN Ji,REN Ya-dong,et al.100 kV Pulse Power System Based on Semiconductor Switch[J].High Power Converter Technology,2014,(06):15.[doi:10.13889/j.issn.2095-3631.2014.04.004]
[3]Thomas Stiasny,Vasileios Kappatos,Thomas Setz,等.IGCT——更高功率处理能力的正确选择[J].控制与信息技术(原大功率变流技术),2015,(06):1.[doi:10.13889/j.issn.2095-3631.2015.06.001]
 Thomas Stiasny,Vasileios Kappatos,Thomas Setz,et al.Where Higher Power Handling Capability is Required - IGCT is the Right Choice[J].High Power Converter Technology,2015,(06):1.[doi:10.13889/j.issn.2095-3631.2015.06.001]
[4]席力克,刘 凌,宋 超,等.混合动力客车动力总成用联接器的可靠性提升设计[J].控制与信息技术(原大功率变流技术),2016,(01):53.[doi:10.13889/j.issn.2095-3631.2016.01.012]
 XI Like,LIU Ling,SONG Chao,et al.Reliability Improved Design of the Coupler for Hybrid Bus Power-train[J].High Power Converter Technology,2016,(06):53.[doi:10.13889/j.issn.2095-3631.2016.01.012]
[5]黄蓉,李世平,任亚东,等.特高压直流输电用晶闸管dv/dt特性试验研究[J].控制与信息技术(原大功率变流技术),2013,(04):4.[doi:10.13889/j.issn.2095-3631.2013.04.002]
 HUANG Rong,LI Shi-ping,REN Ya-dong,et al.Research on dv/dt Performance Test of Thyristors Used in Ultra High Voltage DC Transmission[J].High Power Converter Technology,2013,(06):4.[doi:10.13889/j.issn.2095-3631.2013.04.002]
[6]熊辉,邵云,颜骥,等.基于Fluent的6英寸晶闸管水冷散热器设计及优化[J].控制与信息技术(原大功率变流技术),2013,(04):22.[doi:10.13889/j.issn.2095-3631.2013.04.003]
 XIONG Hui,SHAO Yun,YAN Ji,et al.Design and Optimization of Water-cooled Radiator for 6-inch Thyristor Based on Fluent[J].High Power Converter Technology,2013,(06):22.[doi:10.13889/j.issn.2095-3631.2013.04.003]
[7]杨柳,赵萍,吕杏梅,等.兆瓦级风电机组主传动系统结构研究进展[J].控制与信息技术(原大功率变流技术),2013,(04):28.[doi:10.13889/j.issn.2095-3631.2013.04.008]
 YANG Liu,ZHAO Ping,LV Xing-mei,et al.Advance Research on Main Drive System Structures of Multiple Megawatt Wind Turbines[J].High Power Converter Technology,2013,(06):28.[doi:10.13889/j.issn.2095-3631.2013.04.008]
[8]梁文坤,赖玉斌,方昌始.晶闸管36 脉波变流器的研制[J].控制与信息技术(原大功率变流技术),2016,(04):13.[doi:10.13889/j.issn.2095-3631.2016.04.003]
 LIANG Wenkun,LAI Yubin,FANG Changshi.Development of 36-pulse Converter with Thyristor[J].High Power Converter Technology,2016,(06):13.[doi:10.13889/j.issn.2095-3631.2016.04.003]
[9]徐凝华,彭勇殿,罗海辉,等.热循环过程中 IGBT 模块封装退化研究[J].控制与信息技术(原大功率变流技术),2016,(04):23.[doi:10.13889/j.issn.2095-3631.2016.04.005]
 XU Ninghua,PENG Yongdian,LUO Haihui,et al.Study of the Package Degradation of IGBT Module during Thermal Cycling Test[J].High Power Converter Technology,2016,(06):23.[doi:10.13889/j.issn.2095-3631.2016.04.005]
[10]邓小川,陈茜茜,王弋宇,等.1 200 V SiC MOSFET 晶体管的高温可靠性研究[J].控制与信息技术(原大功率变流技术),2016,(05):62.[doi:10.13889/j.issn.2095-3631.2016.05.013]
 DENG Xiaochuan,CHEN Xixi,WANG Yiyu,et al.High-temperature Reliability of 1 200 V SiC Power MOSFETs[J].High Power Converter Technology,2016,(06):62.[doi:10.13889/j.issn.2095-3631.2016.05.013]
[11]张西应,颜 骥,任亚东.应力- 强度干涉模型在功率半导体器件失效分析中的应用[J].控制与信息技术(原大功率变流技术),2016,(01):34.[doi:10.13889/j.issn.2095-3631.2016.01.008]
 ZHANG Xiying,YAN Ji,REN Yadong.Application of Stress-strength Interference Model in Failure Analysis of Power Semiconductor Device[J].High Power Converter Technology,2016,(06):34.[doi:10.13889/j.issn.2095-3631.2016.01.008]

备注/Memo

备注/Memo:
收稿日期:2016-12-26
作者简介:王亚飞(1987-),男,工程师,主要从事功率半导体器件芯片仿真设计及芯片工艺研发工作。
更新日期/Last Update: 2017-12-18