[1]钱建波,黄世东.IGBT 用氮化铝覆铜衬板可靠性研究[J].控制与信息技术,2017,(05):55-59.[doi:10.13889/j.issn.2095-3631.2017.05.009]
 QIAN Jianbo,HUANG Shidong.Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT[J].High Power Converter Technology,2017,(05):55-59.[doi:10.13889/j.issn.2095-3631.2017.05.009]
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IGBT 用氮化铝覆铜衬板可靠性研究()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
55-59
栏目:
“IGBT联盟学术会议”专刊
出版日期:
2017-10-05

文章信息/Info

Title:
Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT
文章编号:
2095-3631(2017)05-0055-05
作者:
钱建波黄世东
(浙江德汇电子陶瓷有限公司, 浙江 嘉兴 314000)
Author(s):
QIAN Jianbo HUANG Shidong
(Zhejiang TC Ceramic Electronic Co., Ltd., Jiaxing, Zhejiang 314000, China)
关键词:
IGBT 模块AlN 覆铜衬板活性金属钎焊可靠性
Keywords:
IGBT module AlN ceramic substrate active metal brazing(AMB) reliability
分类号:
TN304
DOI:
10.13889/j.issn.2095-3631.2017.05.009
文献标志码:
A
摘要:
随着功率半导体器件特别是高压、大电流IGBT 模块的快速发展和广泛应用,对封装材料中的陶瓷衬板提出了更高的要求,其中可靠性是其设计中最为关键的指标之一。活性金属钎焊工艺(AMB)制备的AlN 陶瓷覆铜衬板因可靠性高而成为高压大功率IGBT 模块封装中陶瓷衬板的首选。文章对比了AMB 工艺和DBC 工艺制备的AlN 陶瓷覆铜衬板的剥离强度和热冲击性能,并提出了控制TiN 层厚度、增加铜箔边缘小孔深度和增加铜箔侧蚀量3 种方法来提升AMB 工艺制备的AlN 覆铜衬板的可靠性。结果表明,可靠性提升后的A
Abstract:
With the rapid development and widespread use of power electronic devices, especially high voltage and high current IGBT modules, higher performance is put forward for ceramic substrate in package materials, and reliability requirements are one of the most critical indicators for the design of ceramic substrate. In the field of high voltage and high power IGBT module package, active metal brazing (AMB) AlN substrate is the best choice due to its high reliability. In this paper, the peel strength and thermal shock resistance of AlN ceramic substrate prepared by AMB process and DBC (direct bond copper) process were compared, and the reliability of AMB-AlN substrate can be improved by controlling the thickness of its TiN layer, increasing the depth of its copper edge holes and increasing the side etching of copper coil. The results show that the thermal shock can be 1300 times, the peel strength can be 18 N/mm, and the void ratio can be 0%. Its performance is better than the foreign product and can meet the package application requirement of high voltage and high power IGBT module.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2017-08-14
作者简介:钱建波(1987-),男,硕士研究生,主要研究厚膜和薄膜金属化的工业化应用并开发活性钎工艺。
更新日期/Last Update: 2017-10-09