[1]高云斌,等.SiC MOSFET 芯片设计关键技术及发展趋势[J].控制与信息技术(原大功率变流技术),2017,(01):33-38.[doi:10.13889/j.issn.2095-3631.2017.01.007]
 GAO Yunbin,LI Chengzhan,et al.Key Techniques of SiC MOSFET Chip Design and its Development Trend[J].High Power Converter Technology,2017,(01):33-38.[doi:10.13889/j.issn.2095-3631.2017.01.007]
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SiC MOSFET 芯片设计关键技术及发展趋势()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年01期
页码:
33-38
栏目:
电力电子器件
出版日期:
2017-02-05

文章信息/Info

Title:
Key Techniques of SiC MOSFET Chip Design and its Development Trend
文章编号:
2095-3631(2017)01-0033-06
作者:
高云斌1 2李诚瞻1 2蒋华平1 2
(1. 新型功率半导体器件国家重点实验室,湖南 株洲 412001;2. 株洲中车时代电气股份有限公司,湖南 株洲 412001)
Author(s):
GAO Yunbin 1 2 LI Chengzhan 1 2 JIANG Huaping 1 2
( 1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001, China; 2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China )
关键词:
SiC MOSFET阻断特性导通电阻阈值电压结构参数
Keywords:
SiC MOSFET blocking characteristics on-state resistance threshold voltage structure parameter
分类号:
TN304.2+4
DOI:
10.13889/j.issn.2095-3631.2017.01.007
文献标志码:
A
摘要:
介绍了SiC MOSFET 器件应用所具有的技术优势,并从理想耐压与导通电阻理论入手,确定了漂移层耐压结构的优化设计;综合考量阈值电压、氧化层电场集中和导通电阻特性,确定了芯片元胞各关键区域的优化设计; 最后,从导通电阻优化、更高电压等级芯片研制和单片集成续流二极管3 方面,阐述了SiC MOSFET 芯片未来的技术发展趋势。
Abstract:
It introduced the application advantages of SiC MOSFET and determined an optimized design of drift layer structure based on the theory of ideal blocking characteristics and on-state resistance. Afterwards, the design of key structures in cell was optimized in consideration of threshold voltage, oxide electric field crowding and on-state resistance. Finally, the development trend of SiC MOSFET chip was expounded from the aspects of on-resistance optimization, higher voltage grade chip development and monolithic integrated freewheeling diode.

参考文献/References:

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[2]BALIGA B J. Silicon Carbide power devices[M]. Singapore: World Scientific, 2005:234-241.
[3]BERTHOU M. Implementation of High Voltage Silicon Carbide Rectifiers and Switches[D]. Lyon:Institut National des Sciences Appliquées de Lyon, 2012.
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[5]SAHA A, COOPER J A. A 1-kV 4H-SiC Power DMOSFET Optimized for Low on -Resistance[J]. IEEE Transactions on Electron Devices, 2007, 54(10):2786-2791.
[6]ZHANG Q J, WANG G, DOAN H, et al. Latest results on 1 200 V 4H-SiC CIMOSFETs with R sp, on, of 3.9 mΩ·cm2, at 150℃[C] //IEEE International Symposium on Power Semiconductor Devices & IC’s. IEEE, 2015:89-92.
[7]GRIDER D, DAS M, AGARWAL A, et al. 10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation[C]//Electric Ship Technologies Symposium. IEEE, 2011:131-134.
[8]PALA V, BRUNT E V, RYU S H, et al. Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes[C]//International Symposium on Power Semiconductor Devices and ICS, 2016:227-230.
[9]JIANG H, WEI J, DAI X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss[C] //International Symposium on Power Semiconductor Devices and ICS, 2016:59-62.

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备注/Memo

备注/Memo:
收稿日期:2016-11-21
作者简介:高云斌(1988-),男,工程师,主要从事SiC 功率器件设计开发工作。
更新日期/Last Update: 2017-02-28