[1]邓小川,陈茜茜,王弋宇,等.1 200 V SiC MOSFET 晶体管的高温可靠性研究[J].控制与信息技术,2016,(05):62-64.[doi:10.13889/j.issn.2095-3631.2016.05.013]
 DENG Xiaochuan,CHEN Xixi,WANG Yiyu,et al.High-temperature Reliability of 1 200 V SiC Power MOSFETs[J].High Power Converter Technology,2016,(05):62-64.[doi:10.13889/j.issn.2095-3631.2016.05.013]
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1 200 V SiC MOSFET 晶体管的高温可靠性研究()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年05期
页码:
62-64
栏目:
电力电子器件
出版日期:
2016-10-05

文章信息/Info

Title:
High-temperature Reliability of 1 200 V SiC Power MOSFETs
文章编号:
2095-3631(2016)05-0062-03
作者:
邓小川 1陈茜茜1王弋宇2申华军3唐亚超13高云斌2
(1. 电子科技大学, 四川 成都 610054;2. 新型功率半导体器件国家重点实验室,湖南株洲 412001; 3. 中国科学院微电子研究所,北京 100029)
Author(s):
DENG Xiaochuan1 CHEN Xixi1 WANG Yiyu2 SHEN Huajun3 TANG Yachao 13 GAO Yunbing 2
(1. University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China; 2. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001, China; 3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
关键词:
SiC MOSFET高温栅偏高温反偏可靠性
Keywords:
SiC MOSFET HTGB HTRB reliability
分类号:
TN306;TN304.2+4
DOI:
10.13889/j.issn.2095-3631.2016.05.013
文献标志码:
A
摘要:
高温可靠性是目前限制SiC MOSFET 晶体管高温应用的关键问题之一。本文介绍了基于国内碳化硅器件工艺平台研制的1 200 V SiC MOSFET 器件的直流特性,并通过高温栅偏(HTGB) 和高温反偏(HTRB) 试验对器件高温可靠性进行测试分析。试验结果表明:所研制的1 200 V SiC MOSFET 器件在经过168 h 的HTGB 和HTRB 可靠性试验后,所有测试器件的击穿电压>1 200 V,阈值电压偏移量<15%,导通电阻偏移量<15%,显示出优良的器件鲁棒性,也初步证明了国产SiC MOSFET 器件的设计、工艺及其研制的可行性。
Abstract:
High-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic process platform, and then its high-temperature reliability was analyzed after high temperature gate-bias test (HTGB) and high temperature reversebias test (HTRB). The experimental results indicated that after 168 hours HTGB and HTRB tests, breakdown voltage of the fabricated samples is more than 1 200 V and the variations of threshold voltage and on-resistance are less than 15% respectively, suggesting good robustness of these devices. It also confirms the feasibility of the design, process and fabrication of domestic 1 200 V SiC MOSFETs.

参考文献/References:

[1]PALMOUR J W,CHENG L,PALA V,et al. Silicon Carbide power MOSFETs: breakthrough performance from 900 V up to 15 kV[C]// International Symposium on Power Semiconductor Devices & IC’s,2014:79-82.
[2]SCHROCK J A,RAY II W B,LAWSON K,et al. High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions[J]. IEEE Transactions on Power Electronics, 2015, 30(6):2891-2895.
[3]YU L C, DUNNE G T, MATOCHA K S, et al. Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments [J]. IEEE Transactions on Device and Materials Reliability, 2010, 10(4):418-426.
[4]中国国家标准化管理委员会. GB/T 6219-1998 半导体器件分立器件第8 部分:场效应晶体管[S]. 北京:中国标准出版社, 1998.

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备注/Memo

备注/Memo:
收稿日期:2016-05-09
作者简介:邓小川(1974-),男,博士,副教授,从事碳化硅功率半导体技术研究。
基金项目:国家科技重大专项子课题(编号 2013ZX02305-002);广东省自然科学基金(编号2015A030313875)
更新日期/Last Update: 2016-11-01