[1]袁 昊,宋庆文,汤晓燕,等.1 200 V 4H-SiC 结势垒肖特基二极管温度特性研究[J].控制与信息技术,2016,(05):59-61.[doi:10.13889/j.issn.2095-3631.2016.05.012]
 YUAN Hao,SONG Qingwen,TANG Xiaoyan,et al.Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode[J].High Power Converter Technology,2016,(05):59-61.[doi:10.13889/j.issn.2095-3631.2016.05.012]
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1 200 V 4H-SiC 结势垒肖特基二极管温度特性研究()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年05期
页码:
59-61
栏目:
电力电子器件
出版日期:
2016-10-05

文章信息/Info

Title:
Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode
文章编号:
2095-3631(2016)05-0059-03
作者:
袁 昊1宋庆文2汤晓燕1元 磊1张义门1张玉明1
(1. 西安电子科技大学微电子学院,陕西 西安 710071;2. 西安电子科技大学先进材料与纳米科技学院,陕西 西安 710071)
Author(s):
YUAN Hao 1 SONG Qingwen 2 TANG Xiaoyan 1 YUAN Lei 1 ZHANG Yimen 1 ZHANG Yuming
(1. School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China; 2. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, Shaanxi 710071, China)
关键词:
4H-SiCJBS温度特性
Keywords:
4H-SiC JBS temperature characteristic
分类号:
TN304.2+4
DOI:
10.13889/j.issn.2095-3631.2016.05.012
文献标志码:
A
摘要:
为了更好地研究温度对碳化硅结势垒肖特基二极管(SiC JBS)静态电学参数的影响,我们成功制备了 1.2 kV SiC JBS 并对其在25 ℃~ 150 ℃温度范围内的静态I-V 特性进行了研究。结果显示,常温工况下,所制器件在偏压为1.5 V 时的正向电流可以达到5 A,而反向击穿电压高于1 300 V,具有良好的正、反向静态特性;高温工况下(150 ℃),所制器件可以正常工作。随着温度的升高,器件的肖特基势垒高度及理想因子基本保持不变,具有良好的稳定性。正向工作时,由于材料迁移率的下降,器件导通电阻随着温度的升高而不断增大(为正温度系数);反向工作时,击穿电压没有随着温度的升高而退化,漏电流则随着温度的升高而不断上升,低压时150 ℃状态下漏电流相较于常温状态的上升了1.5 个数量级,而高压时同样情况下仅上升了1 个数量级,符合雪崩击穿机制。
Abstract:
In order to research the effect of temperature on static electrical parameters of 4H–SiC junction barrier Schottky (JBS) diode,1.2 kV 4H–SiC JBS diodes were fabricated and their current-voltage characteristics were measured in the range of 25 ℃ ~150 ℃ . The results illustrate the forward current is 5 A at room temperature with forward voltage drop of 1.5 V and its breakdown voltage can reach to 1 300 V at least, illustrate a good static I-V characteristic. Meanwhile, the fabricated device can work normally under high temperature (150 ℃ ), and the schottky height and ideal factor remain unchanged with temperature increasing, thus it has good stability. However, its onresistance increases with temperature rising due to the decreasing of mobility of carrier, which shows positive temperature coefficient. At reverse bias, breakdown voltage does not degrade as temperature rising. Reverse leakage current rises by almost 1.5 orders of magnitude at low reverse voltage comparing to the reverse leakage current at room temperature and rises by only 1order of magnitude at high reverse voltage with temperature increasing, which is in accord with avalanche breakdown mechanism.

参考文献/References:

[1]CHEN Fengping, ZHANG Yumin, ZHANG Yimen, etal. Temperature-dependent characteristics of 4H SiC junction barrier Schottky diodes [J].Chinese Physics B, 2012, 21(2):400-404.
[2]IVANOV P A, GREKHOV I V, POTAPOV A S, et al. Leakage currents in 4H-SiC JBS diodes[J]. Semiconductors 2012, 46(3): 397-400.
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[5]NI Weijiang, LI Yuzhu, LI Zheyang, et al. 1200 V, 5A 4H-SiC JBS Working at 250 ℃[J]. Research & progress of SSE, 2010(4): 478-480.
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备注/Memo

备注/Memo:
收稿日期:2016-04-30
 作者简介:袁昊(1989-),男,在读博士研究生,主要从事SiC 功率器件的研究工作。
基金项目:国家自然基金项目(61404098,61176070 及61274079);国家教育部博士点专项基金(20110203110010,20130203120017);国家重点基础研究计划(2015CB759600);中国教育部重点项目(625010101)
更新日期/Last Update: 2016-11-01