[1]罗剑波,范 伟,彭 凯.SiC MOSFET 模块高频吸收电路研究[J].控制与信息技术(原大功率变流技术),2016,(05):23-30.[doi:10.13889/j.issn.2095-3631.2016.05.005]
 LUO Jianbo,FAN Wei,PENG Kai.High Frequency Snubber Circuit for SiC MOSFET Module[J].High Power Converter Technology,2016,(05):23-30.[doi:10.13889/j.issn.2095-3631.2016.05.005]
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SiC MOSFET 模块高频吸收电路研究()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年05期
页码:
23-30
栏目:
变流与控制
出版日期:
2016-10-05

文章信息/Info

Title:
High Frequency Snubber Circuit for SiC MOSFET Module
文章编号:
2095-3631(2016)05-0023-08
作者:
罗剑波范 伟彭 凯
(中车株洲所电气技术与材料工程研究院,湖南株洲 412001)
Author(s):
LUO JianboFAN WeiPENG Kai
(CRCC ZIC Research Institute of Electrical Technology & Material Engineering, Zhuzhou, Hunan 412001, China )
关键词:
SiC MOSFET高频开关吸收电路谐振小信号模型
Keywords:
SiC MOSFET high frequency switching snubber circuit resonant small signal model
分类号:
TN304.2+4;TN6
DOI:
10.13889/j.issn.2095-3631.2016.05.005
文献标志码:
A
摘要:
在高频开关工况下,SiC 器件分布参数(电感、电容)间耦合振荡带来的过电压易造成元器件的击穿损坏、引发的电磁噪声会干扰变流器其他部件的正常运行。文章对SiC MOSFET 的开关过电压进行了机理分析,特别是杂散电感对其开关特性的影响,对其吸收回路进行了研究,利用开关系统大信号模型等效出脉冲开关系统小信号模型,并依此分析了吸收电容对关断过电压的影响,提出了SiC MOSFET 高频吸收电路的选型方案。仿真和实验结果验证了分析结论的正确性及所提方案的有效性和可行性。
Abstract:
During high frequency switching condition, overvoltage caused by the coupling oscillation between distributed parameters(inductance, capacitor) on Silicon Cabide(SiC) device will easily lead to breakdown damage of devices and the generated electromagnetic noise will interfere the normal operation of other parts in converters. It analyzed the mechanism of overvoltage during SiC MOSFET switching, especially the influence of stray inductance on its switching characteristics, and studied its snubber circuit. Small equivalent signal model of impulse switching was achieved based on big signal model of switching system, and thus analyzed the influence that snubber capacitor brought to switching-off overvoltage, issued a selected plan of SiC MOSFET high frequency snubber circuit. Simulation and experimental results validated correction of the analysis conclusion and effectiveness and feasibility of the plan.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2016-04-30
作者简介:罗剑波(1987-),男,工程师,主要从事变流器模块应用技术研究。
基金项目:国家科技重大专项02 专项(2012ZX02305)
更新日期/Last Update: 2016-11-01