[1]漆 宇,李彦涌,胡家喜,等.SiC 功率器件应用现状及发展趋势[J].控制与信息技术(原大功率变流技术),2016,(05):1-6.[doi:10.13889/j.issn.2095-3631.2016.05.001]
 QI Yu,LI Yanyong,HU Jiaxi,et al.Application Status of SiC Power Device and Its Development Tendency[J].High Power Converter Technology,2016,(05):1-6.[doi:10.13889/j.issn.2095-3631.2016.05.001]
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SiC 功率器件应用现状及发展趋势()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年05期
页码:
1-6
栏目:
综述·评论
出版日期:
2016-10-05

文章信息/Info

Title:
Application Status of SiC Power Device and Its Development Tendency
文章编号:
2095-3631(2016)05-0001-06
作者:
漆 宇李彦涌胡家喜范 伟唐 威
(中车株洲所电气技术与材料工程研究院,湖南株洲 412001)
Author(s):
QI YuLI YanyongHU JiaxiFAN WeiTANG Wei
(CRRC ZIC Research Institute of Electrical Technology & Material Engineering, Zhuzhou, Hunan 412001, China)
关键词:
宽禁带材料碳化硅功率半导体器件大功率变流器
Keywords:
wide bandgap material SiC power semiconductor device high power converter
分类号:
TN304.2+4
DOI:
10.13889/j.issn.2095-3631.2016.05.001
文献标志码:
A
摘要:
典型的宽禁带半导体材料碳化硅(SiC)具备击穿场强高、饱和电子漂移速率快及热导率高等特性,能满足现代功率器件在大功率场合、高频高温工况下应用的发展需求。本文以开关电源、电动汽车、新能源发电、轨道交通和智能电网等应用领域为背景,对SiC 功率器件的应用现状和发展趋势进行了分析。结果表明,SiC 功率器件的应用有利于变流器系统功率密度和整体效率的提升,具备替代硅材料半导体器件的潜质。
Abstract:
The representative wide bandgap semiconductor material-Silicon Carbide(SiC) has the characteristics of high breakdown voltage, high electron saturation velocity, high thermal conductivity,which can meet the requirements of power electronic device applied under high power, high temperature and high frequency conditions. The application status and development tendency on SiC power device was analyzed based on various application fields such as switch power supply, electric vehicle, new energy power generation, rail transit and intelligent grid,etc. The results show that SiC is benefit for the improvement of power density and efficiency of converter, and thus has the potential to replace Silicon semiconductor devices.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2016-03-29
作者简介:漆宇(1987-),男,博士,工程师,主要从事变流器及半导体功率器件应用技术研究工作。
基金项目:国家科技重大专项02 专项(2013ZX02305)
更新日期/Last Update: 2016-11-01