[1]张西应,颜 骥,任亚东.应力- 强度干涉模型在功率半导体器件失效分析中的应用[J].控制与信息技术,2016,(01):34-38.[doi:10.13889/j.issn.2095-3631.2016.01.008]
 ZHANG Xiying,YAN Ji,REN Yadong.Application of Stress-strength Interference Model in Failure Analysis of Power Semiconductor Device[J].High Power Converter Technology,2016,(01):34-38.[doi:10.13889/j.issn.2095-3631.2016.01.008]
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应力- 强度干涉模型在功率半导体器件失效分析中的应用()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年01期
页码:
34-38
栏目:
电力电子器件
出版日期:
2016-02-05

文章信息/Info

Title:
Application of Stress-strength Interference Model in Failure Analysis of Power Semiconductor Device
文章编号:
2095-3631(2016)01-0034-05
作者:
张西应颜 骥任亚东
(株洲南车时代电气股份有限公司,湖南 株洲 412001)
Author(s):
ZHANG XiyingYAN JiREN Yadong
(Zhuzhou CSR Times Electric Co.,Ltd.,Zhuzhou,Hunan 412001,China)
关键词:
晶闸管机械应力干涉模型失效模式可靠性正态分布
Keywords:
thyristor mechanical stress interference model failure type reliability normal distribution
分类号:
TN303
DOI:
10.13889/j.issn.2095-3631.2016.01.008
文献标志码:
A
摘要:
功率半导体器件发生机械应力失效的直接原因是外部应力大于器件自身强度,并间接引发器件上电应力或者热应力过载,最终造成器件损坏。文章结合机械可靠性理论中应力- 强度干涉模型,以晶闸管为例对其机械应力失效的物理过程和失效机理进行解释,得出失效分析和可靠性设计的工程计算方法,并结合测试中发生的晶闸管失效案例对该分析计算方法的可行性和有效性进行了验证。
Abstract:
The direct reason of power semiconductor device failure from mechanical stress is that outside stress comes bigger than the strength of the device, which indirectly causes upload of electricity stress or heat stress and ultimately brings about failure of the device. Combining the stress-strength interference model in mechanical reliability theory, the physical process and mechanism of thyristor failure from mechanical stress were explained by taking the thyristor as an example, and the engineering calculation in failure analysis and reliability design were obtained. Moreover, the feasibility and effectiveness of this calculation method were verified on the basis of thyristor failure case during the test.

参考文献/References:

[1] 钟群鹏,宋光雄,张峥,等. 机械失效模式、原因和机理的诊断思路和主要依据[J]. 北京航空航天大学学报,2004 (10): 913-914.
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[5] 黄云,恩云飞. 电子元器件失效模式分析技术[J]. 电子元件与材料, 2007 (4):65-66.
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备注/Memo

备注/Memo:
收稿日期:2015-10-05
作者简介:张西应(1991-),男,工程师,主要从事大功率半导体器件的应用研究工作。
更新日期/Last Update: 2016-04-18