[1]Thomas Stiasny,Vasileios Kappatos,Thomas Setz,等.IGCT——更高功率处理能力的正确选择[J].控制与信息技术,2015,(06):1-7.[doi:10.13889/j.issn.2095-3631.2015.06.001]
 Thomas Stiasny,Vasileios Kappatos,Thomas Setz,et al.Where Higher Power Handling Capability is Required - IGCT is the Right Choice[J].High Power Converter Technology,2015,(06):1-7.[doi:10.13889/j.issn.2095-3631.2015.06.001]





Where Higher Power Handling Capability is Required - IGCT is the Right Choice
Thomas StiasnyVasileios KappatosThomas SetzSven KlakaMakan ChenMadhan Mohan
ABB 瑞士半导体有限公司,伦茨堡 CH-5600
Thomas StiasnyVasileios KappatosThomas SetzSven KlakaMakan ChenMadhan Mohan
ABB Switzerland Semiconductors, Rendsburg CH-5600, Switzerland
IGCT high power reliability efficiency low losses power semiconductor
IGCT 被视为大功率应用的理想开关器件,其主要优势不仅体现在高可靠性上, 同时, 其低损耗使得系统损耗较低。在三电平拓扑中,IGCT 与目前最高水平的IGBT 在器件损耗方面的对比结果为IGCT 的较低。由于IGCT 器件是基于晶闸管特性,系统中独立的箝位电路设计是必须的,以实现其与续流二极管配合工作时的高可靠性。文中不仅提到了对故障现象的特别考虑,重点介绍了外围电路设计和故障电流保护策略,而且介绍了IGCT 目前最新的研发成果。在朝更大功率容量方向发展方面,IGCT 器件具有很大的潜力。
Integrated gate-commutated thyristor (IGCT) is described as ideal switch in high power applications, not only because of its high reliability, but also for its low device losses resulting in low system losses. IGCT is compared with state of the art IGBT, concerning losses on device level as well as on system level in a 3-level topology. Due to the thyristor characteristic as the basic nature of device, separate clamp circuit design is needed to allow for highly reliable operation of the switches together with their freewheeling diodes in a system. Also special considerations apply for fault cases. The important details for such circuit design and a fault current protection strategy are explained. IGCT is a device with significant potential to develop for higher power handling. Latest development results are presented.


[1]Klaka S ,Frecker M, Grüning H. The Integrated Gate-Commutated Thyristor: A New High-Efficiency,High Power Switch for Series or Snubberless Operation[C]// PCIM Europe, 1997.
[2]Steimer P K, Apeldoorn O, Alessandro L D, et al. Medium Voltage Power Conversion for Windpower[C]// PCIM Europe, Nürnberg,2013.
[3]Lesnicar A, Marquardt R. An Innovative Modular Multilevel Converter Topology Suitable for a Wide Power Range[C]//Power Tech. Conference , Bologna, 2003.
[4]Wellemann A, Leutwyler R, Waldmeyer J. High Current, High Voltage Solid State Discharge Switches for Electromagnetic Launch Applications[C]// 14th Symposium on Electromagnetic Launch Technology. Victoria, 2008.
[5]Wikstr?m T, Stiasny T, Rahimo M, et al. The Corrugated P-Base IGCT – a New Benchmark for Large Area SOA Scaling[C]//19th International Symposium on Power Semiconductor Devices and IC’s. Jeju, 2007:29-32.
[6]ABB. Application Note 5SYA 2046-03: Failure rates of IGCTsdue to cosmic rays[Z/OL]. 2014-03[2015-11-10]. https://library.e.abb.com/public/bd768e775889ce19c125707400347c7d/Failure%20rates%20of%20IGCTs%20due%20to%20cosmic%20rays_5SYA%202046-03.pdf.
[7]ABB. Application Note 5SYA 2032-03“Applying IGCTs”[Z/OL].2014-05-14[2015-11-10]. https://library.e.abb.com/public/51154b233cdcc83883257cd3002af728/Applying%20IGCTs_5SYA%202032-03.pdf.
[8]Rahimo M, Arnold M, Vemulapati U, et al. Optimization of High Voltage IGCTs towards 1V On-State Losses[C]// PCIM Europe,Nürnberg,2013.
[9] Vemulapati U, Arnold M, Rahimo M, et al. An Experimental Demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT) [C]// 27th International Symposium on Power Semiconductor Devices and IC’s. Hong Kong, 2015:109-112.
[10]Wikstr?m T, Arnold M, Stiasny T, et al. The 150 mm RC-IGCT: a Device for the Highest Power Requirements[C]// 26th International Symposium on Power Semiconductor Devices and IC’s. Waikoloa,2014:91-94.
[11]Nistor I, Scheinert M, Wikstr?m T, et al. An IGCT chip set for 7.2 kV (RMS) VSI application[C]// 20th International Symposium on Power Semiconductor Devices and IC’s. Orlando,2008:36-39.
[12]ABB. Application Note 5SYA 2031-04 "Applying IGCT gate units"[Z/OL]. 2015-11[2015-11-10]https://library.e.abb.com/public/dd8f7aa3dc9f43918e03d5d7807fb47d/Applying%20IGCT%20gate%20units_5SYA%202031-05_Sep2015.pdf.
[13]ABB Switzerland Ltd Semiconductors. Three-level VSC with IGCT[Z/OL]. 2015-08-21[2015-11-10]. http://new.abb.com/semiconductors/semis6-IGCT3level4Q.
[14]Ladoux P, Serbia N, Carroll E. On the Potential of IGCTs in HVDC[ J ] . Emerging and Selected Topics in Power Electronics,2015,3(3):780-793.
[15]Vemulapati U, Rahimo M, Arnold M, et al. Recent Advancement in IGCT Technologies for High Power Elekctronics Applications[C]// EPE. Geneva, 2015.
[16]Nistor I, Wikstr?m T, Scheinert M, et al. 10kV HPT IGCT rated at 3200A, a new milestron in high power semiconductors[C]// PCIM Europe. Nürnberg, 2010.


[1]冯江华,胡 惇,罗凌波. 交直交中压大功率变频技术在冶金轧机上的应用[J].控制与信息技术,2015,(05):1.[doi:10.13889/j.issn.2095-3631.2015.05.001]
 FENG Jianghua,HU Dun,LUO Lingbo. Application of AC-DC-AC High -power Medium-voltage Converter on Metallurgical Mill[J].High Power Converter Technology,2015,(06):1.[doi:10.13889/j.issn.2095-3631.2015.05.001]
[2]张 明.大功率半导体器件的可靠性评估[J].控制与信息技术,2015,(01):1.[doi:10.13889/j.issn.2095-3631.2015.01.001]
 ZHANG Ming.Reliability Evaluation of High Power Semiconductors[J].High Power Converter Technology,2015,(06):1.[doi:10.13889/j.issn.2095-3631.2015.01.001]
[3]陈芳林,吴煜东,张 明,等.逆导IGCT补偿型PNP隔离技术研究[J].控制与信息技术,2015,(01):31.[doi:10.13889/j.issn.2095-3631.2015.01.007]
 CHEN Fanglin,WU Yudong,ZHANG Ming,et al.Research on the Isolation Technology for Reverse Conducting IGCT[J].High Power Converter Technology,2015,(06):31.[doi:10.13889/j.issn.2095-3631.2015.01.007]
[4]胡家喜,李彦涌,孙保涛,等.20 MVA 三电平IGCT 变流器的研制[J].控制与信息技术,2015,(05):8.[doi:10.13889/j.issn.2095-3631.2015.05.002]
 HU Jiaxi,LI Yangyong,SUN Baotao,et al.Development of 20 MVA Three-level IGCT Converter[J].High Power Converter Technology,2015,(06):8.[doi:10.13889/j.issn.2095-3631.2015.05.002]
[5]高建宁,陈芳林,张 明,等.IGCT 配套FRD 器件的性能优化[J].控制与信息技术,2015,(05):29.[doi:10.13889/j.issn.2095-3631.2015.05.006]
 GAO Jianning,CHEN Fanglin,ZHANG Ming,et al.Characteristic Optimization of the FRD for IGCT[J].High Power Converter Technology,2015,(06):29.[doi:10.13889/j.issn.2095-3631.2015.05.006]
[6]李彦涌,胡家喜,孙保涛.一种结构紧凑的三联对称式IGCT 相模块的设计[J].控制与信息技术,2015,(06):8.[doi:10.13889/j.issn.2095-3631.2015.06.002]
 LI Yanyong,HU Jiaxi,SUN Baotao.Design of a Tri-linked Symmetry IGCT Phase Module with Compact Structure[J].High Power Converter Technology,2015,(06):8.[doi:10.13889/j.issn.2095-3631.2015.06.002]
[7]刘建平,马振宇,孙保涛,等.两电平IGCT 功率模块母线杂散电感优化设计[J].控制与信息技术,2015,(06):14.[doi:10.13889/j.issn.2095-3631.2015.06.003]
 LIU Jianping,MA Zhenyu,SUN Baotao,et al.Optimal Design of Stray Inductance of Busbar in Two-level IGCT Power Module[J].High Power Converter Technology,2015,(06):14.[doi:10.13889/j.issn.2095-3631.2015.06.003]
[8]曾文彬,颜 骥,任亚东,等.IGCT 晶片的封装结构设计[J].控制与信息技术,2015,(06):20.[doi:10.13889/j.issn.2095-3631.2015.06.004]
 ZENG Wenbin,YAN Ji,REN Yadong,et al.Package Structure Design of IGCT Wafer[J].High Power Converter Technology,2015,(06):20.[doi:10.13889/j.issn.2095-3631.2015.06.004]
[9]曾 宏,陈修林,王三虎,等.一种新型 GCT 开通驱动电路拓扑[J].控制与信息技术,2015,(06):25.[doi:10.13889/j.issn.2095-3631.2015.06.005]
 ZENG Hong,CHEN Xiulin,WANG Sanhu,et al.A New Drive Circuit Topology for GCT Turning-on[J].High Power Converter Technology,2015,(06):25.[doi:10.13889/j.issn.2095-3631.2015.06.005]
 WUYu-dong,CHENFang-lin,LEIYun,et al.Research on the Performance of Integrated Gate Commutated Thyristor[J].High Power Converter Technology,2012,(06):1.[doi:10.13889/j.issn.2095-3631.2012.06.001]


作者简介:Thomas Stiasny(1964-),男,博士,首席工程师,主要从事双极型器件技术方面的研究。
更新日期/Last Update: 2016-03-24