[1]陈 俊,万超群,陈 彦,等.大功率压接式IGBT及其在脉冲强磁场发生器中的应用[J].控制与信息技术,2017,(03):59-62.[doi:10.13889/j.issn.2095-3631.2017.03.011]
 CHEN Jun,WAN Chaoqun,CHEN Yan,et al.High Power Press-pack IGBT and Its Application in Pulsed Magnetic-field Generator[J].High Power Converter Technology,2017,(03):59-62.[doi:10.13889/j.issn.2095-3631.2017.03.011]
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大功率压接式IGBT及其在脉冲强磁场发生器中的应用()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年03期
页码:
59-62
栏目:
工业应用
出版日期:
2017-06-05

文章信息/Info

Title:
High Power Press-pack IGBT and Its Application in Pulsed Magnetic-field Generator
文章编号:
2095-3631(2017)03-0059-04
作者:
陈 俊1万超群2陈 彦2黎小林1
(1.南方电网科学研究院有限责任公司,广东 广州 510080;2.株洲中车时代电气股份有限公司,湖南 株洲 412001)
Author(s):
CHEN Jun1WAN Chaoqun2CHEN Yan2LI Xiaolin1
(1. Electric Power Research Institute of China Southern Power Grid, Guangzhou, Guangdong 510080, China; 2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
压接式IGBT功率组件IGBT关断栅极电阻脉冲强磁场发生器
Keywords:
press-pack IGBT power assembly IGBT turn-off gate resistor pulsed magnetic-field generator
分类号:
TN782;TN32
DOI:
10.13889/j.issn.2095-3631.2017.03.011
文献标志码:
A
摘要:
在一些特殊的高压、大电流应用场所,若采用传统的模块式IGBT器件,会增加整个系统的结构复杂度及控制难度。为此,采用全压接技术研发了新型压接式IGBT器件并依此研制了一种大功率开关组件,其采用两串三并结构、由6只压接式IGBT组成,额定电压6 600 V,持续电流和可关断电流为20 kA,最长通态持续时间可达10 s。该组件已应用于多个领域,文中主要介绍其在脉冲强磁场发生器中的应用;为增强导通能力,对栅极电路进行优化设计,减少了组件中的IGBT数量并降低了IGBT关断过电压。仿真及现场运行结果显示,该IGB
Abstract:
In some special field of high voltage and high current, the application of conventional IGBT will increase the complexity of system structure and difficulties of control. Therefore, this paper introduced a new type of power press-pack IGBT device. Based on the proposed press-pack IGBT device, a press-pack IGBT stack was developed, consisting of 6 press-pack IGBTs and of 2S3P structure. Its maxim on-state duration is 10 s, persistent current and turn off current is 20 kA, and rated voltage is up to 6 600 V. The proposed IGBT stack has been applied in various fields, among which its application in pulsed magnetic-field generator is highlighted in this paper. To enhance conduction ability, the gate circuit design has been optimized, the quantity of IGBTs and turnoff overvoltage have also been reduced. Simulation results show the good performance of the proposed IGBT stacks, which can meet the requirements of pulsed magnetic-field generator.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2016-12-21
作者简介:陈俊(1986-),男,硕士,工程师,主要从事柔性输电和电力电子技术研究。
更新日期/Last Update: 2017-06-28